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GENERAL-USE RECTIFIER DIODE
DSM1D
FEATURES
* For general purpose. * Diffused-junction. Resin encapsulated.
Direction of polarity
OUTLINE DRAWING
2.65 (0.10)
Unit in mm(inch)
0.6 (0.024)
59MIN. (2.32)
5 (0.2)
1D1
DSM1D1 DSM1D2 DSM1D4 DSM1D6 DSM1D8
Yellow White Blue Red Green
Weight: 0.23 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage Average Forward Current Surge(Non-Repetitive) Forward Current I2t Limit Value Operating Junction Temperature Storage Temperature VRRM IF(AV) IFSM I2t Tj Tstg
Type
V A A A2s C C
DSM1D1 DSM1D2 DSM1D4 DSM1D6 DSM1D8
100 200 400 600 800 Single-phase half sine wave 180 conduction 1.0 TL = 70C, Lead length = 6mm
(
27MIN. (1.06)
Type mark
Type
Color of cathode band
Cathode band
27MIN. (1.06)
)
45 8.1 ( Time = 2 ~ 10ms, I = RMS value ) -40 ~ +150 -40 ~ +150
30 3.6
( Without PIV, 10ms conduction, Tj = 40C start )
Notes
(1) Lead mounting : Lead temperature 280C max. to 3.2mm from body for 5sec. max.. (2) Mechanical strength : Bending 90x2 cycles or 180x1 cycle, Tensile 2kg, Twist 90x1 cycle.
CHARACTERISTICS(TL=25C)
Items
Peak Reverse Current Peak Forward Voltage Steady State Thermal Impedance
Symbols
IRRM VFM Rth(j-a) Rth(j-l)
Units
A V C/W
Min.
-
Typ.
-
Max.
20 10 1.1 100 70
Test Conditions
DSM1D1,2 DSM1D4,6,8 Rated VRRM
IFM=1.0Ap, Single-phase half sine wave 1 cycle Lead length = 6 mm
PDE-DSM1D-0
DSM1D
Forward characteristics
100
Single-phase half sine wave Conduction : 10ms 1 Cycle
Max. average forward power dissipation (Resistive or inductive load)
MAX. AVERAGE FORWARD POWER DISSIPATION (W)
2.0
DC
PEAK FORWARD CURRENT (A)
1.5
10
Single-phase ( 50Hz )
1.0
TL=150C TL=25C
1
0.5
0.1
0
1
2
3
4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PEAK FORWARD VOLTAGE DROP (V)
AVERAGE FORWARD CURRENT (A)
Max. allowable ambient temperature (Resistive or inductive load)
MAX. ALLOWABLE AMBIENT TEMPERATURE (C)
180 160 140 120 100 80 60 40 20 0 0 0.2 L
Lead length =6mm PC board (100x180x1.6t) Copper foil ( 5.5) Single-phase half sine wave 180 conduction (50Hz)
Max. allowable lead temperature (Resistive or inductive load)
180
MAX. ALLOWABLE LEAD TEMPERATURE (C)
160 140 120 100 80
L Lead length =6mm Lead temp Copper foil ( 5.5) PC board (100x180x1.6t)
Single-phase half sine wave 180 conduction (50Hz)
60 40 20 0 0 0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.6
0.8
1.0
1.2
AVERAGE FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
Surge forward current characteristic (Non-repetitive)
60
Surge current peak value
Transient thermal impedance
0
TRANSIENT THERMAL IMPEDANCE (C/W)
SURGE FORWARD CURRENT (A)
50
Without PIV
10ms 1 cycle
100
Rth(j-a)
Rth(j-l)
40
10
30
DSM1D1,2,4 DSM1D6,8
20
L
Lead length =6mm Lead temp Copper foil ( 5.5) PC board (100x180x1.6t)
1.0
10
0
1
10 CYCLES
100
0.1 0.001
0.01
0.1
1.0
10
100
TIME (s)
PDE-DSM1D-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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